Highly conducting SrMoO_3 thin films for microwave applications

摘要

We have measured the microwave resistance of highly conducting perovskite oxide SrMoO_3 thin film coplanar waveguides. The epitaxial SrMoO_3 thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3 nm. Layer-by-layer growth could be achieved for film thicknesses up to 400 nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29μΩ·cm between 0.1 and 20 GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO_3 is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.