机译:低缺陷InGaAs量子阱通过在下一代非平面器件的Si(100)300 mm晶圆上进行金属有机化学气相沉积而选择性地生长
Univ. Grenoble Alpes, LTM, F-38000 France CNRS, LTM, F-38000 Grenoble, France,Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble, France;
Univ. Grenoble Alpes, LTM, F-38000 France CNRS, LTM, F-38000 Grenoble, France;
Univ. Grenoble Alpes, LTM, F-38000 France CNRS, LTM, F-38000 Grenoble, France;
Univ. Grenoble Alpes, LTM, F-38000 France CNRS, LTM, F-38000 Grenoble, France;
Univ. Grenoble Alpes, LTM, F-38000 France CNRS, LTM, F-38000 Grenoble, France;
Univ. Grenoble Alpes, LTM, F-38000 France CNRS, LTM, F-38000 Grenoble, France,Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble, France;
Univ. Grenoble Alpes, LTM, F-38000 France CNRS, LTM, F-38000 Grenoble, France;
Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble, France;
Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble, France;
Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble, France;
Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble, France;
Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble, France;
Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble, France;
Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, Universite de Lyon, 7 Avenue Jean Capelle, 69621 Villeurbanne, France;
Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USA;
Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USA;
Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USA;
Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054, USA;
机译:低缺陷InGaAs量子阱通过在下一代非平面器件的Si(100)300 mm晶圆上进行金属有机化学气相沉积而选择性地生长
机译:通过金属有机化学气相沉积在结构基板上生长的低阈值单量子阱InGaAs / GaAs激光器
机译:高性能980 nm量子阱激光器,采用无金属InGaAs-InGaAsP有源区和通过金属有机化学气相沉积法生长的AlGaAs包层的混合材料系统
机译:氮诱导的定位和缺陷在IngaAsp中的作用(≈2%n):通过分子束外延和金属 - 有机化学气相沉积的InGaAsn的比较
机译:基于外延锗层的金属氧化物半导体器件,通过超高真空化学气相沉积直接在硅衬底上选择性生长
机译:应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的(001)图案化Si衬底上生长的InP的缺陷
机译:在Gaas衬底上通过金属有机化学气相沉积生长的InGaas / InGaasp / InGap量子阱激光二极管的界面结构