机译:硅掺杂GaN中的位错核心结构
Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD, United Kingdom,Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS, United Kingdom;
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076, India;
Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS, United Kingdom,Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom;
机译:通过具有超低位错密度的Si掺杂金属有机气相外延GaN模板,通过氢化物气相外延生长的高质量2英寸大块自由态GaN
机译:InN / GaN(0001)界面的三周期部分失配位错:Ⅲ-N材料的新位错核心结构
机译:GaN中的位错核的电子结构和金属化效应
机译:GaN的位错核心结构的电子结构分析
机译:具有闪锌矿和金刚石晶体结构的立方材料中位错核的结构。
机译:掺杂Si的InGaN底层对不同数量的量子阱的InGaN / GaN量子阱结构的光学性能的影响
机译:si掺杂GaN中的位错核心结构