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Transmission type flat-panel X-ray source using ZnO nanowire field emitters

机译:使用ZnO纳米线场发射器的透射型平板X射线源

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摘要

A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18-20kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.
机译:制作了二极管结构的透射型平板X射线源。利用通过热氧化在玻璃基板上生长的大规模图案化的ZnO纳米线作为场发射器,并使用涂覆在石英玻璃上的钨薄膜作为透射阳极。实现了X射线生成的均匀分布,这得益于ZnO纳米线的均匀电子发射。 ZnO纳米线的内在电阻引起的自镇流效应和由图案化发射极引起的屏蔽效应的降低是均匀发射的原因。在阳极电压为18-20kV的范围内,观察到了W-L线和致辐射X射线的特征X射线峰,其中后者是主要的X射线信号。通过平板X射线源获得空间分辨率小于25μm的高分辨率X射线图像。高分辨率归因于从透射X射线源发出的X射线的发散角小。

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  • 来源
    《Applied Physics Letters》 |2015年第24期|243105.1-243105.5|共5页
  • 作者单位

    State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China,School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China,School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China,School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China;

    The First Affiliated Hospital, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China,School of Microelectronics, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China,School of Microelectronics, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China,School of Microelectronics, Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China,School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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