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A simplified method for generating periodic nanostructures by interference lithography without the use of an anti-reflection coating

机译:一种通过干涉光刻产生周期性纳米结构而无需使用抗反射涂层的简化方法

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摘要

Interference lithography has proven to be a useful technique for generating periodic sub-diffraction limited nanostructures. Interference lithography can be implemented by exposing a photoresist polymer to laser light using a two-beam arrangement or more simply a one beam configuration based on a Lloyd's Mirror Interferometer. For typical photoresist layers, an anti-reflection coating must be deposited on the substrate to prevent adverse reflections from cancelling the holographic pattern of the interfering beams. For silicon substrates, such coatings are typically multilayered and complex in composition. By thinning the photoresist layer to a thickness well below the quarter wavelength of the exposing beam, we demonstrate that interference gratings can be generated without an anti-reflection coating on the substrate. We used ammonium dichromate doped polyvinyl alcohol as the positive photoresist because it provides excellent pinhole free layers down to thicknesses of 40 nm, and can be cross-linked by a low-cost single mode 457 nm laser, and can be etched in water. Gratings with a period of 320 nm and depth of 4 nm were realized, as well as a variety of morphologies depending on the photoresist thickness. This simplified interference lithography technique promises to be useful for generating periodic nanostructures with high fidelity and minimal substrate treatments.
机译:干涉光刻已被证明是用于产生周期性的亚衍射极限纳米结构的有用技术。干涉光刻可以通过使用两光束装置或更简单地基于劳埃德镜干涉仪的单光束配置将光致抗蚀剂聚合物曝光于激光来实现。对于典型的光致抗蚀剂层,必须在基底上沉积抗反射涂层,以防止不利的反射抵消干涉光束的全息图案。对于硅基底,这种涂层通常是多层的并且组成复杂。通过将光致抗蚀剂层减薄到远低于曝光光束的四分之一波长的厚度,我们证明了在基板上没有抗反射涂层的情况下可以产生干涉光栅。我们使用重铬酸铵掺杂的聚乙烯醇作为正性光刻胶,因为它提供了出色的无针孔层,厚度低至40 nm,并且可以通过低成本的单模457 nm激光进行交联,并且可以在水中蚀刻。实现了周期为320 nm,深度为4 nm的光栅以及取决于光刻胶厚度的各种形态。这种简化的干涉光刻技术有望用于生成具有高保真度和最少基板处理的周期性纳米结构。

著录项

  • 来源
    《Applied Physics Letters》 |2015年第20期|201105.1-201105.5|共5页
  • 作者单位

    Department of Chemistry, Bar-Han University, Ramat-Gan 5920002, Israel ,Bar-Ilan University Institute for Nanotechnology and Advanced Materials, Ramat-Gan 5920002, Israel;

    Department of Chemistry, Bar-Han University, Ramat-Gan 5920002, Israel ,Bar-Ilan University Institute for Nanotechnology and Advanced Materials, Ramat-Gan 5920002, Israel;

    Department of Chemistry, Bar-Han University, Ramat-Gan 5920002, Israel ,Bar-Ilan University Institute for Nanotechnology and Advanced Materials, Ramat-Gan 5920002, Israel;

    Department of Chemistry, Bar-Han University, Ramat-Gan 5920002, Israel ,Bar-Ilan University Institute for Nanotechnology and Advanced Materials, Ramat-Gan 5920002, Israel;

    Department of Chemistry, Bar-Han University, Ramat-Gan 5920002, Israel ,Bar-Ilan University Institute for Nanotechnology and Advanced Materials, Ramat-Gan 5920002, Israel;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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