机译:Ar等离子体处理的ZnON晶体管用于未来的薄膜电子产品
Analytical Engineering Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Suwon 443-803, South Korea;
Department of Applied Physics, and Department of Display and Semiconductor Physics, Korea University, 2511, Sejongro, Sejong 446-712, South Korea;
Analytical Engineering Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Suwon 443-803, South Korea;
Analytical Engineering Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Suwon 443-803, South Korea;
Department of Applied Physics, and Department of Display and Semiconductor Physics, Korea University, 2511, Sejongro, Sejong 446-712, South Korea;
Analytical Engineering Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Suwon 443-803, South Korea;
机译:用于顶栅共面薄膜晶体管的经等离子体处理的非晶InGaZnO薄膜的深度轮廓XPS分析
机译:在CH3OH / Ar,C2H5OH / Ar,CH4 / Ar和CH4 / O-2 / Ar气体混合物的高密度等离子体中干蚀刻钯薄膜
机译:Ar和H_2等离子体对同质结非晶铟镓锌氧化物薄膜晶体管性能影响的比较
机译:具有薄膜轮廓工程的短通道ZnON薄膜晶体管
机译:用于未来光电子学的非晶铟镓锌氧化物薄膜晶体管。
机译:非晶ZnON薄膜晶体管的局部尾态和电子迁移率
机译:非晶ZnON薄膜晶体管的局部尾态和电子迁移率