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Superconducting properties and chemical composition of NbTiN thin films with different thickness

机译:不同厚度NbTiN薄膜的超导性能和化学成分

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摘要

In this research, we systematically investigated the superconducting properties and chemical composition of NbTiN thin films prepared on single-crystal MgO substrates. The NbTiN thin films with different thicknesses (4-100nm) were deposited by reactive DC magnetron sputtering at ambient temperature. We measured and analyzed the crystal structure and thickness dependence of the chemical composition using X-ray diffraction and X-ray photoelectron spectroscopy depth profiles. The films exhibited excellent superconducting properties, with a high superconducting critical temperature of 10.1 K, low resistivity (p_(20) = 93 μΩcm), and residual resistivity ratio of 1.12 achieved for 4-nm-thick ultrathin NbTiN films prepared at the deposition current of 2.4 A. The stoi-chiometry and electrical properties of the films varied gradually between the initial and upper layers. A minimum p_(20) of 78 μΩ cm and a maximum residual resistivity ratio of 1.15 were observed for 12-nm-thick films, which significantly differ from the properties of NbN films with the same NaCl structure.
机译:在这项研究中,我们系统地研究了在单晶MgO衬底上制备的NbTiN薄膜的超导性能和化学组成。通过在环境温度下进行反应性直流磁控溅射沉积具有不同厚度(4-100nm)的NbTiN薄膜。我们使用X射线衍射和X射线光电子能谱深度图测量并分析了化学成分的晶体结构和厚度依赖性。该膜具有优异的超导性能,在沉积电流下制备的4 nm厚超薄NbTiN膜具有超高的超导临界温度10.1 K,低电阻率(p_(20)= 93μΩcm)和残留电阻率比为1.12。厚度为2.4A。薄膜的化学计量和电性能在初始层和上层之间逐渐变化。对于厚度为12 nm的薄膜,观察到的最小p_(20)为78μΩcm,最大残留电阻率比为1.15,这与具有相同NaCl结构的NbN薄膜的性能明显不同。

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  • 来源
    《Applied Physics Letters》 |2015年第12期|122603.1-122603.4|共4页
  • 作者单位

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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