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InP-based type-Ⅰ quantum well lasers up to 2.9μm at 230 K in pulsed mode on a metamorphic buffer

机译：在变质缓冲液上以脉冲模式在230 K下基于InP的Ⅰ型量子阱激光器可达2.9μm

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摘要

This work reports on up to 2.9 μm lasing at 230 K of InP-based type-Ⅰ quantum well lasers. This record long wavelength lasing is achieved by applying InP-based Sb-free structures with eight periods of strain-compensated InAs quantum wells grown on metamorphic In_(0.8)Al_(0.2)As template layers. The continuous-wave threshold current density is 797 A/cm~2 and the idealized extrapolated threshold current density for infinite cavity length is as low as 58 A/cm~2 per quantum well at 120 K. This scheme is a promising pathway for extending the wavelength range of type-Ⅰ quantum well lasers on InP substrates.
机译：这项工作报道了基于InP的Ⅰ型量子阱激光器在230 K时高达2.9μm的激光。通过应用基于InP的无Sb结构以及在变质In_（0.8）Al_（0.2）As模板层上生长的八个周期的应变补偿InAs量子阱，实现了创纪录的长波长激射。连续波阈值电流密度为797 A / cm〜2，在120 K时无限理想腔长的理想外推阈值电流密度低至每量子阱58 A / cm〜2。 InP衬底上的Ⅰ型量子阱激光器的波长范围。

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  • 来源
    《Applied Physics Letters》 |2015年第12期|121102.1-121102.4|共4页
  • 作者

    Y. Gu; Y. G. Zhang; Y. J. Ma; L. Zhou; X. Y. Chen; S. P. Xi; B. Du;

  • 作者单位

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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