Formation of BaSi_2 heterojunction solar cells using transparent MoO_x hole transport layers

摘要

Heterojunction solar cells that consist of 15 nm thick molybdenum trioxide (MoO_x, x ＜ 3) as a hole transport layer and 600 nm thick unpassivated or passivated n-BaSi_2 layers were demonstrated. Rectifying current-voltage characteristics were observed when the surface of BaSi_2 was exposed to air. When the exposure time was decreased to 1 min, an open circuit voltage of 200 mV and a short circuit current density of 0.5mA/cm 2 were obtained under AM1.5 illumination. The photocurrent density under a reverse bias voltage of - 1 V reached 25 mA/cm~2, which demonstrates the significant potential of BaS_2 for solar cell applications.