An electrically injected rolled-up semiconductor tube laser

摘要

We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ～1.5 μm. A lasing threshold of ～1.05 mA is measured for a rolled-up tube with a diameter of ～5μm and wall thickness of ～140 nm at 80 K. The Purcell factor is estimated to be ～4.3.