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Publisher's Note: 'Morphology and chemical termination of HF-etched Si_3N_4 surfaces' [Appl. Phys. Lett. 105,261603 (2014)]

机译:出版者的注释:“ HF蚀刻的Si_3N_4表面的形态和化学终止”物理来吧105,261603(2014)]

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摘要

This article was originally published online on 30 December 2014. Due to a production error, the initially-published version did not include numerous corrections to the production proof. AIP Publishing apologizes for this error. All online versions of the article were corrected on 5 January 2015, and it appears correctly in print.
机译:本文最初于2014年12月30日在线发布。由于生产错误,最初发布的版本未包含对生产证明的大量更正。 AIP发布对此错误表示歉意。该文章的所有在线版本均已在2015年1月5日得到更正,并且正确显示在印刷版中。

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  • 来源
    《Applied Physics Letters》 |2015年第2期|029901.1-029901.1|共1页
  • 作者单位

    Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080,USA;

    Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080,USA;

    Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080,USA;

    Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080,USA;

    Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080,USA;

    Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080,USA;

    Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA;

    Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA;

    Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080,USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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