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Modification of electronic band structure in mL + nL (m= 1,2; n = 1-5) free-stacking graphene

机译:在mL + nL(m = 1,2; n = 1-5)自由堆积石墨烯中电子能带结构的修饰

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摘要

In this paper, we studied stacked mL + nL graphene layers using Raman scattering spectroscopy. Our results indicate that the 2D band from stacked graphene can be considered as a superposition of those from the constituent nL and mL graphene layers, and a blueshift in the 2D band is observed when n or m= 1. The blueshift increases with the number of stacked layers and can be well understood by the reduction of Fermi velocity in the single layer graphene, as studied in the 1L+ 1L (or twisted bilayer) case. As the number of stacked layers changes from 1 to 5, the Fermi velocity in the single layer graphene reduces to about 85% of its initial value. This study shows a convenient way to realize the modification of the Fermi velocity in free-stacking graphene and is of significance to the applications of graphene-based heterostractures.
机译:在本文中,我们使用拉曼散射光谱学研究了堆叠的mL + nL石墨烯层。我们的结果表明,来自堆叠石墨烯的2D带可被视为构成nL和mL石墨烯层的2D带的叠加,当n或m = 1时,在2D带中观察到蓝移。如在1L + 1L(或扭曲双层)情况下所研究的,通过降低单层石墨烯中的费米速度,可以很好地理解这些结构。随着堆叠层数从1更改为5,单层石墨烯中的费米速度降低至其初始值的85%。这项研究显示了一种实现自由堆积石墨烯费米速度修正的简便方法,对于基于石墨烯的异质结构的应用具有重要意义。

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  • 来源
    《Applied Physics Letters》 |2016年第15期|153111.1-153111.4|共4页
  • 作者单位

    Department of Physics, Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, People's Republic of China;

    Department of Physics, University of Northern Iowa, Cedar Falls, Iowa 50614, USA;

    Department of Physics, Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, People's Republic of China;

    Department of Physics, Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, People's Republic of China;

    Department of Physics, Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, People's Republic of China;

    Department of Physics, Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, People's Republic of China;

    Department of Physics, Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, People's Republic of China;

    Department of Physics, Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, People's Republic of China;

    Department of Physics, Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, People's Republic of China;

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  • 正文语种 eng
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