Atmospheric-pressure epitaxial growth technique of a multiple quantum well by mist chemical vapor deposition based on Leidenfrost droplets

摘要

A multiple quantum well α-Fe_2O_3/α-Ga_2O_3 with parallel and coherent formation of uniform and highly single-crystalline layers on a sapphire substrate has been fabricated by open-air atmospheric-pressure solution-processed mist chemical vapor deposition (Mist CVD). This report demonstrates that complicated structures with atomic-level control can be fabricated even in non-vacuum conditions by the Mist CVD. This can be achieved via the precise control of the precursor flow and ambient temperature combined with the formation of mist droplets of the special Leidenfrost state, which increased the atomic migration length by 108 times more than that of traditional vacuum techniques. This work could be a milestone in the transformation from vacuum to non-vacuum thin film deposition techniques towards a green and sustainable industry.