机译:考虑热边界电阻和随温度变化的热导率的GaN /衬底叠层的热阻优化
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA and Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA and Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA,Innovative COmpound semiconductoR (ICOR) Laboratory, Urbana, Illinois 61801, USA;
机译:激光闪光测量中由温度相关的界面热阻校正的,在铁基上热生长的氧化皮的导热系数
机译:激光闪光测量中由温度相关的界面热阻校正的,在铁基上热生长的氧化皮的导热系数
机译:调制光热反射技术用于测量基底上纳米薄膜的热导率和热边界电阻
机译:互连的热阻测量和热传导路径建模,用于研究三维(3D)芯片堆叠的热阻
机译:热阻和导热率测量装置的开发和验证
机译:纳米结构的热导率和热边界电阻
机译:错误到“通过激光闪光测量温度依赖性界面热阻校正的铁基材上热生长的氧化物垢导热率”Isij International,Vol。 59(2019),3,PP。398-403
机译:结合GaN衬底热边界电阻的氮化镓(GaN)高电子迁移率晶体管(HEmT)器件的混合多栅模型。