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Highly stable solution processed metal-halide perovskite lasers on nanoimprinted distributed feedback structures

机译:纳米压印分布式反馈结构上高度稳定的固溶处理的金属卤化物钙钛矿激光器

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摘要

We report on the performance and stability of distributed feedback lasers based on the solution-processed methylammonium lead iodide perovskite (CH_3NH_3PbI_3). The CH_3NH_3PbI_3 layers are processed via solution-casting in ambient atmosphere onto nanoimprinted second order Bragg gratings. This way, we achieve highly polarized surface-emitted lasing at room temperature with a linewidth of less than 0.2 nm and a laser threshold of 120kW/cm~2. The lasing is stable; no change in the laser emission within 15 h of pulsed excitation with a repetition rate of 1 kHz (corresponding to >5 × 10~7 pulses) is observed, exceeding the stability achieved for solution processed organic semiconductor lasers. Furthermore, adjustment of the grating period allowed the lasing wavelength to be varied over the entire bandwidth of the amplified spontaneous emission (between 781 and 794 nm). The fabrication process of nanoimprinting followed by solution-casting of the gain material demonstrates that stable CH_3NH_3PbI_3 lasers are compatible with scalable production technologies and offers a route towards electrically pumped diode architectures.
机译:我们报告了基于溶液处理的甲基铵碘化铅钙钛矿(CH_3NH_3PbI_3)的分布式反馈激光器的性能和稳定性。 CH_3NH_3PbI_3层通过在环境大气中的溶液浇铸到纳米压印的二阶布拉格光栅上进行处理。这样,我们在室温下实现了高度偏振的表面发射激光,其线宽小于0.2 nm,激光阈值为120kW / cm〜2。激光稳定;在脉冲激发的15小时内,没有观察到激光发射的变化,重复频率为1 kHz(相当于> 5×10〜7个脉冲),超过了溶液处理有机半导体激光器所能达到的稳定性。此外,光栅周期的调节允许激光波长在放大的自发发射的整个带宽上(在781和794 nm之间)变化。纳米压印的制造过程以及增益材料的溶液浇铸表明,稳定的CH_3NH_3PbI_3激光器与可扩展的生产技术兼容,并提供了通往电泵浦二极管架构的途径。

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  • 来源
    《Applied Physics Letters》 |2016年第14期|141106.1-141106.5|共5页
  • 作者单位

    Light Technology Institute, Karlsruhe Institute of Technology, Engesserstr. 13, 76131 Karlsruhe, Germany;

    Light Technology Institute, Karlsruhe Institute of Technology, Engesserstr. 13, 76131 Karlsruhe, Germany,Institute of Applied Physics, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, 76131 Karlsruhe, Germany;

    Light Technology Institute, Karlsruhe Institute of Technology, Engesserstr. 13, 76131 Karlsruhe, Germany;

    Light Technology Institute, Karlsruhe Institute of Technology, Engesserstr. 13, 76131 Karlsruhe, Germany;

    Light Technology Institute, Karlsruhe Institute of Technology, Engesserstr. 13, 76131 Karlsruhe, Germany,Institute of Microstructure Technology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany;

    Light Technology Institute, Karlsruhe Institute of Technology, Engesserstr. 13, 76131 Karlsruhe, Germany,Center of Functional Nanostructures, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1a 76131 Karlsruhe, Germany;

    Light Technology Institute, Karlsruhe Institute of Technology, Engesserstr. 13, 76131 Karlsruhe, Germany,Institute of Microstructure Technology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany;

    Institute of Applied Physics, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, 76131 Karlsruhe, Germany;

    Light Technology Institute, Karlsruhe Institute of Technology, Engesserstr. 13, 76131 Karlsruhe, Germany,Institute of Microstructure Technology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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