Investigation of the behaviour of electronic resistive switching memory based on MoSe_2-doped ultralong Se microwires

摘要

MoSe_2-doped ultralong Se microwires of length/diameter ratio in the order of ～240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe_2-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of ～10~2 for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour.