机译:SiC霍尔效应元件上的低噪声外延石墨烯,用于商业应用
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland,Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;
Industrial Research Institute for Automation and Measurements PIAP, Al. Jerozolimskie 202, 02-486 Warsaw, Poland;
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;
Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;
Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;
机译:SiC外延石墨烯中量子霍尔效应边缘态的可压缩性
机译:在SiC上抑制量子霍尔效应边缘状态的压缩性
机译:在余量效应测量的钒补偿6H-SiC上的外延石墨烯中的热活化双载体传输
机译:SiC上的晶圆级外延石墨烯,用于传感应用
机译:电子应用硅上外延3C-SiC薄膜的生长和表征。
机译:SiC上生长的超低孔密度单层外延石墨烯的磁阻
机译:高温霍尔效应传感器,基于外延石墨烯高纯度半径4H-SIC