Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

摘要

Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 ℃. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm~2/V s, subthreshold swing (SS) of 0.39 V/decade, threshold voltage (V_(TH)) of 1.5 V, and I_(ON/OFF) ratio of ～10~7. A significant improvement in the field-effect mobility (up to ～33.5 cm~2/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, V_(TH), or I_(ON/OFF) ratio due to the presence of a highly ordered microstructure.