p-BaSi_2-Si heterojunction solar cells with conversion efficiency reaching 9.0%

摘要

p-BaSi_2-Si heterojunction solar cells consisting of a 20 ran thick B-doped p-BaSi_2 epitaxial layer (p = 2.2 × 10~(18) cm~3) on n-Si(111) (ρ = 1-4 Ω cm) were formed by molecular beam epitaxy. The separation of photogenerated minority carriers is promoted at the heterointerface in this structure. Under AM1.5 illumination, the conversion efficiency η reached 9.0%, which is the highest ever reported for solar cells with semiconducting silicides. An open-circuit voltage of 0.46 V, a short-circuit current density of 31.9mA/cm~2, and a fill factor of 0.60 were obtained. These results demonstrate the high potential of BaSi_2 for solar cell applications.