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机译:掺氢调制非晶铟镓锌氧化物半导体薄膜的电性能
Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, South Korea;
Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, South Korea;
Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, South Korea;
School of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea;
Department of Display R&D center, Samsung Display, Yongin 446-711, South Korea;
Department of Display R&D center, Samsung Display, Yongin 446-711, South Korea;
Department of Display R&D center, Samsung Display, Yongin 446-711, South Korea;
机译:源极和漏极接触对基于非晶碳纳米膜作为阻挡层的铟镓锌氧化物薄膜晶体管性能的影响
机译:铜扩散驱动的非晶氧化物半导体电性能的动态调制
机译:氢自由基CVD法制得的氢化非晶碳化硅薄膜的光浸前后的电性能
机译:氢化对无定形INASSB薄膜结构,光学和电性能的影响
机译:PECVD氢化非晶硅膜和HWCVD氢化非晶硅膜的质子NMR研究。
机译:组成对非晶GaxSe100-x纳米棒薄膜电学和光学性能的影响
机译:不同结构氢非晶碳膜的导电性能
机译:非晶硫属化物半导体薄膜中的导电和电气开关