首页> 外文期刊>Applied Physics Letters >Excitation of coherent propagating spin waves in ultrathin CoFeB film by voltage-controlled magnetic anisotropy
【24h】

Excitation of coherent propagating spin waves in ultrathin CoFeB film by voltage-controlled magnetic anisotropy

机译:压控磁各向异性激发超薄CoFeB薄膜中相干传播自旋波

获取原文
获取原文并翻译 | 示例
           

摘要

Spin waves (SWs) may be used as potential information carriers in next generation low-power spintronics devices. Here, we report an experimental study on the excitation of propagating magnetostatic surface SWs by voltage-controlled magnetic anisotropy in a 2 nm thick CoFeB film. The SWs are detected by a pico-second time-resolved longitudinal Kerr microscope with a spatial resolution of 600 nm. We found a linear increase in the SW amplitude with the applied rf voltage. We show that in this ultrathin film, the voltage excited SWs can propagate up to micrometer distances which decrease with the increase in the bias magnetic field value. This is also supported by micromagnetic simulation results. Furthermore, we show that voltage excitations are spatially localized as opposed to conventional microstrip antenna induced Oersted field excitations. We discuss about the advantage of voltage excitation compared to the Oersted field excitation. We believe that voltage excitation of SWs will be more suitable and useful for the development of all-voltage-controlled nanoscale spintronics devices with a high density of integration.
机译:自旋波(SW)可用作下一代低功耗自旋电子器件中的潜在信息载体。在这里,我们报告了在2 nm厚的CoFeB膜中通过压控磁各向异性激发传播的静磁表面SW的实验研究。通过一个皮秒时间分辨的纵向Kerr显微镜以600 nm的空间分辨率检测SW。我们发现,随着施加的射频电压,SW幅度呈线性增加。我们表明,在这种超薄膜中,电压激励的SW可以传播到微米距离,该距离随着偏置磁场值的增加而减小。微磁仿真结果也支持这一点。此外,我们显示出电压激励在空间上是局部的,与传统的微带天线诱发的奥斯特场激励相反。我们讨论了与Oersted励磁相比电压励磁的优势。我们认为,开关的电压激励将更适合于开发具有高集成度的全电压控制纳米级自旋电子器件。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第5期|052404.1-052404.5|共5页
  • 作者单位

    Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Japan;

    Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Japan,Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Japan;

    Research and Development Group, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo, Japan;

    Research and Development Group, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo, Japan;

    Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako, Japan,Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号