Magnetoelectronic transport of double stack FePt nanodots

摘要

We designed and fabricated double stack FePt-nanodots (FePt-NDs) with different coercivities between the lower and upper NDs, in which the FePt-NDs were formed by exposing Pt/Fe bilayer stacks of different thicknesses to a remote H_2 plasma. The double-stacked NDs show a clear change in their resistive state depending on the relative directions of magnetization between the upper and lower dots. From the high on/off current ratio between the high and low resistive states observed in the current-voltage characteristics, the FePt-NDs can be regarded as a spin-diode gate.