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Monitoring of early catastrophic optical damage in laser diodes based on facet reflectivity measurement

机译:基于小面反射率测量的激光二极管早期灾难性光学损伤监测

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摘要

We propose a convenient, inexpensive technique to monitor the fast early stage of catastrophic optical damage (COD) in 808-nm high-power laser diodes (LDs). Using an optical system based on the 1550-nm laser diode illuminant and photodiode, we measured the facet reflectivity, which gives information about the surface morphology of the output facet with a temporal resolution of 2 ns, allowing us to trace the rapid early COD process in a transient, real-time mode. The formation of the detected 4-μm-long COD damaged area, which caused a local uneven surface at the output facet and a rapid drop in facet reflectivity at 1550nm from 28% to 2%, was completed within 20-30 ns, 10 ns shorter than that in the longer-wavelength devices.
机译:我们提出了一种方便,廉价的技术来监视808 nm高功率激光二极管(LD)中灾难性光学损伤(COD)的快速早期阶段。使用基于1550 nm激光二极管光源和光电二极管的光学系统,我们测量了小平面反射率,该反射率以2 ns的时间分辨率提供了有关输出小平面的表面形态的信息,从而使我们能够追踪早期的快速COD工艺在瞬态实时模式下。在20-30 ns,10 ns内完成了检测到的4μm长的COD损坏区域的形成,该区域在输出刻面上造成局部不平整的表面,并且在1550nm处刻面反射率从28%迅速下降到2%比较长波长的设备短。

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  • 来源
    《Applied Physics Letters》 |2017年第22期|223503.1-223503.5|共5页
  • 作者单位

    Faculty of Information Technology, School of Microelectronics, Beijing University of Technology, Beijing 100124, China;

    Faculty of Information Technology, School of Microelectronics, Beijing University of Technology, Beijing 100124, China;

    Faculty of Information Technology, School of Microelectronics, Beijing University of Technology, Beijing 100124, China;

    Hebei Semiconductor Institute, Shijiazhuang 050051, China;

    Hebei Semiconductor Institute, Shijiazhuang 050051, China;

    Faculty of Information Technology, School of Microelectronics, Beijing University of Technology, Beijing 100124, China;

    Faculty of Information Technology, School of Microelectronics, Beijing University of Technology, Beijing 100124, China;

    State Grid Key Laboratory of Power Chip Design and Analysis Technology, Beijing Smart-Chip Microelectronics Technology Company Limited, Beijing 100031, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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