机译:退火AIN:Tb中of和氧共偏析的证据
Department of Electronic and Electrical Engineering, Krolo Centre for High-Resolution Imaging and Spectroscopy, University of Sheffield, North Campus, Wheeldon Street, Sheffield S3 7HQ, United Kingdom;
Institute of Materials Science, University of Stuttgart, Heisenbergstr 3, 70569 Stuttgart, Germany;
Institut fur Halbleiterphysik, Universitdt Ulm, D-89069 Ulm, Germany;
Institut fur Halbleiterphysik, Universitdt Ulm, D-89069 Ulm, Germany;
LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287, USA;
Department of Electronic and Electrical Engineering, Krolo Centre for High-Resolution Imaging and Spectroscopy, University of Sheffield, North Campus, Wheeldon Street, Sheffield S3 7HQ, United Kingdom;
机译:多晶掺conductivity氮化铝(Tb:AIN)陶瓷中的可见光致发光,具有高导热性
机译:退火后处理对射频磁控溅射制备AIN:Tb〜(3+)薄膜的结构和发光性能的影响
机译:利用痕量氧杂交溅射和高温退火的结晶AIN薄膜极性调谐
机译:高平均功率法拉第隔离器用石榴石:成分,掺杂和高温退火对近红外范围内损耗的影响
机译:铜钛碳铝和多二二铽锰三氧化中量子相变的无弹性光散射研究
机译:具有单电子Ter- Bond键的氮杂富勒烯Tb2 @ C79N中的高磁化阻断温度和高矫顽力
机译:退火alN:Tb中铽和氧共偏析的证据