Fabrication and high temperature electronic behaviors of n-W0_3 nanorods/p-diamond heterojunction

摘要

This work explores the temperature-dependent characteristic and carrier transport behavior of a heterojunction of n-WO_3 nanorods (NRs)/p-diamond. The n-type WO_3 NRs grown by the hydro-thermal method were deposited on a p-type boron-doped diamond film. The p-n heterojunction devices showed good thermal stability and have rectification characteristic from room temperature up to 290°C. With increasing temperature, the turn-on voltages were decreased, and the rectification ratios were relatively high. The calculated ideality factor of the device decreased monotonously with increased temperature. The carrier transport mechanisms at different applied bias voltages following Ohmic laws, recombination-tunneling, and space-charge-limited current conduction of the heterojunction are discussed depending on temperature.