机译:W掺杂的VO_2纳米线的单斜-四方(金红石)相变过程中M_2相的直接证据
Department of Mechanical Engineering-Engineering Mechanics, Michigan Technological University, Houghton, Michigan 49931, USA Department of Mechanical and Industrial Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, USA;
Department of Mechanical Engineering-Engineering Mechanics, Michigan Technological University, Houghton, Michigan 49931, USA;
Shanghai University Materials Genome Institute and Shanghai Materials Genome Institute, Shanghai University, Shanghai 200444, China;
Department of Chemistry, Texas A&M University, College Station, Texas 77843, USA;
Department of Chemistry, Texas A&M University, College Station, Texas 77843, USA;
Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, USA;
Department of Chemistry, Texas A&M University, College Station, Texas 77843, USA;
Department of Mechanical and Industrial Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, USA;
机译:掺杂VO2纳米线中单斜四方(金红石)相变的原子起源
机译:后退火法改善磁控溅射W掺杂VO_2薄膜的相变性能
机译:基于棉织物上掺W的VO_2薄膜的半导体(金属)到金属(R)相变特性的红外隐身性能
机译:具有可调谐相变温度的W-掺杂VO_2(m)
机译:超导纳米线的开关电流分布:量子相移事件的证据。
机译:气相精氨酸精氨酸的红外光谱:从非两性离子结构到两性离子结构转变的直接证据
机译:VO_2中的单斜和相关金属相作为莫特的证据 过渡:相干声子分析
机译:黑洞(BH)源中的光谱指数和准周期振荡频率相关:BHs中两相和相变的观测证据