机译:演示了调制掺杂的β-(Al_xGa_(1-x))2O_3 / Ga_2O_3异质结构中的高迁移率和量子输运
Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA;
Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA;
Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA;
Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA;
Ohio State Univ, Dept Mat Sci & Engn, 116 W 19Th Ave, Columbus, OH 43210 USA;
Ohio State Univ, Dept Mech & Aerosp Engn, Columbus, OH 43210 USA;
Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA;
Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA;
Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA;
Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA;
Ohio State Univ, Dept Mat Sci & Engn, 116 W 19Th Ave, Columbus, OH 43210 USA;
Ohio State Univ, Dept Mat Sci & Engn, 116 W 19Th Ave, Columbus, OH 43210 USA;
Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA;
机译:调制掺杂的Al_xGa_(1-x)N / GaN单量子阱中的量子和传输散射时间
机译:阶跃量子阱中调制掺杂的Al_xGa_(1-x)As / In_yGa_(1-y)As / Al_xGa_(1-x)中的原子排列,电子参数和电子结构
机译:β-(Al_xGa_(1-x)_2O_3 / Ga_2O_3双异质结构场效应晶体管的演示
机译:调制掺杂的Al_xGa_(1-x)N / GaN单量子阱中二维电子气的反弱定位
机译:非化学计量化合物V_2O_ [3 + x]和(V_ [1-x] Ti_x)_2O_3系统的平衡相图和物理性质
机译:分析生长和退火的n型和p型调制掺杂GaInNAs / GaAs量子阱中的霍尔迁移率
机译:GaAs / Al_xGa_ {1-x} As量子阱中声子辅助激子的形成和弛豫
机译:具有插入的薄alas势垒的调制掺杂alGaas / Gaas / alGaas量子阱中电子迁移率的大幅增加。