Phosphorus oxide gate dielectric for black phosphorus field effect transistors

摘要

The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm(2) V-1 s(-1) in ambient conditions, which we attribute to the low defect density of the bP/POx interface. (C) 2018 Author(s).