首页> 外文期刊>Applied Physics Letters >Mobility spectrum analytical approach for the type-Ⅱ Weyl semimetal T_d-MoTe_2
【24h】

Mobility spectrum analytical approach for the type-Ⅱ Weyl semimetal T_d-MoTe_2

机译:Ⅱ型魏尔半金属T_d-MoTe_2的迁移谱分析方法

获取原文
获取原文并翻译 | 示例
           

摘要

The extreme magnetoresistance (XMR) in orthorhombic W/MoTe2 arises from the combination of the perfect electron-hole (e-h) compensation effect and the unique orbital texture topology, which have comprised an intriguing research field in materials physics. Herein, we apply a special analytical approach as a function of mobility (l-spectrum) without any hypothesis. Based on the interpretations of longitudinal and transverse electric transport of T-d-MoTe2, the types and the numbers of carriers can be obtained. There are three observations: the large residual resistivity ratio can be observed in the MoTe2 single crystal sample, which indicates that the studied crystal is of high quality; we observed three electron-pockets and three hole-ones from the l-spectrum and that the ratio of h/e is much less than 1, which shows that MoTe2 is more e-like; different from the separated peaks obtained from the hole-like l-spectrum, those of the electron-like one are continuous, which may indicate the topological feature of electron-pockets in T-d-MoTe2. The present results may provide an important clue to understanding the mechanism of the XMR effect in T-d-MoTe2. Published by AIP Publishing.
机译:正交晶W / MoTe2中的极磁致电阻(XMR)是由完美的电子-空穴(e-h)补偿效应和独特的轨道织构拓扑组成的,这构成了材料物理学中一个有趣的研究领域。在这里,我们采用一种特殊的分析方法,作为流动性(I谱)的函数,没有任何假设。基于对T-d-MoTe2纵向和横向电传输的解释,可以获得载流子的类型和数量。有3个观察结果:在MoTe2单晶样品中可以观察到较大的剩余电阻率比,这表明所研究的晶体是高质量的。我们从l光谱中观察到三个电子口袋和三个空穴,并且h / e的比值远小于1,这表明MoTe2更像e。与从孔状l光谱获得的分离峰不同,电子状峰是连续的,这可能表明T-d-MoTe2中电子口袋的拓扑特征。目前的结果可能为理解T-d-MoTe2中XMR效应的机制提供重要线索。由AIP Publishing发布。

著录项

  • 来源
    《Applied Physics Letters》 |2018年第7期|072401.1-072401.5|共5页
  • 作者单位

    Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China;

    Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China;

    Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China;

    Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China;

    Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China;

    Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China;

    Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China;

    Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China;

    Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China;

    Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China;

    Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China;

    Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号