Electrodeposited CuSCN metal-semiconductor-metal high performance deep-ultraviolet photodetector

摘要

This study reports a low-cost electrodeposited copper(I) thiocyanate (CuSCN) film as a wide band-gap absorber layer for deep-ultraviolet (DUV) photodetector (PD) applications. Electrodeposited CuSCN films deposited with electrolyte concentrations of 24 mM and 33 mM were evaluated as the absorber layers for planar metal-semiconductor-metal PDs. The best photo-responsivity of the CuSCN PD was found to be as high as 70.3 A/W at a — 1 V bias under DUV illumination at 300 nm, which corresponded to an external quantum efficiency of 3.1 x 10~4%. Furthermore, the DUV-to-visible rejection ratio (R_(300nm)/R_(400nm)) of ~10~3 was realized. This study demonstrated that the CuSCN film has great potential for low-cost DUV PD applications.