Trilayer low-temperature-grown GaAs terahertz emitter and detector device with doped buffer

摘要

A low-temperature-grown GaAs (LTG-GaAs) terahertz (THz) photoconductive antenna device with layer structure consisting of doped buffer demonstrated enhanced emission intensity and detection sensitivity. As THz emitter, a 116% increase is exhibited by the LTG-GaAs with doped buffer relative to its undoped counterpart at 9 V bias and 0.8 mW pump power with spectral distribution extending to similar to 3 THz. As a THz detector, a dynamic range of 55 dB is obtained at 0.5 THz, which is 5 dB higher than its undoped counterpart. The device proved effective as a THz emitter at low operating bias and pump power while its detection characteristics are acceptable even at low incident THz powers.