Temperature effect on the electrical and optical properties of indium-selenide thin-films

摘要

Indium-Selenide thin-films have been prepared by the thermal-evaporation technique at a pressure of 4.5 x 10~(-6) torr and a temperature of 673-873 K. For both the as-deposited and annealed films, (ⅰ) the electrical conductivity increased with increasing temperature and (ⅱ) the variation of activation energy follows the island structure theory. The temperature co-efficient of resistance (T.C.R.) and Hall-effect measurements indicate that the sample is a n-type carrier. The optical spectra for both types of films were obtained in the wavelength range 0.3 < λ < 2.5 μm, and by comparing the magnitude of transmittance spectra, it is found that the annealed films are more transparent than the as-deposited ones in the UV and visible range. The integrated transmittance and reflectance values were obtained: the high values of T_(lum) and T_(sol) for the annealed films suggest that indium selenide may be used in selective-surface devices.