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首页> 外文期刊>Applied Computational Electromagnetics Society journal >Influence of the Simulation Parameters on the Normalized Impedance Derived by the Random Coupling Model Simulation
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Influence of the Simulation Parameters on the Normalized Impedance Derived by the Random Coupling Model Simulation

机译:仿真参数对随机耦合模型仿真得出的归一化阻抗的影响

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摘要

The random coupling model (RCM, introduced by the "chaos group" in the University of Maryland, is found of great use in making statistical predictions of the induced voltages and currents on objects or components within complicated (wave-chaotic) cavities when excited by external high power microwave (HPM) radiation. A key point to applying the RCM to a real system is to generate the normalized cavity impedance, which can be described by the random matrix theory (RMT), from the cavity loss parameter by using random matrix Monte Carlo simulation. The influences of the simulation parameters on the statistics of the generated normalized impedance are presented and discussed in this paper. It's found that the statistics of the normalized impedance only depends on the loss parameter, alpha, which agrees with the theory. When alpha increases, the variances of the eigenvalues, the diagonal elements and the off-diagonal elements of the normalized impedance are exponentially damped with different damping factor, which are experimentally verified in the paper.
机译:发现随机耦合模型(RCM,由马里兰大学的“混沌小组”引入)在对复杂(波动混沌)腔体中被激发的物体或组件的感应电压和电流进行统计预测时,具有很大的应用价值。外部高功率微波(HPM)辐射。将RCM应用于实际系统的关键是通过使用随机矩阵从腔损耗参数生成归一化腔阻抗,该阻抗可由随机矩阵理论(RMT)来描述。蒙特卡罗仿真,提出并讨论了仿真参数对所生成归一化阻抗统计量的影响,发现归一化阻抗统计量仅取决于损耗参数α,与理论相符。当alpha增加时,归一化阻抗的特征值,对角元素和非对角元素的方差会以指数方式衰减, nt阻尼系数,已在实验中进行了验证。

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