Perovskite Quantum Dots Embedded Composite Films Enhancing UV Response of Silicon Photodetectors for Broadband and Solar-Blind Light Detection

摘要

In this work, the integration of in situ fabricated perovskite quantum dotsrnembedded composite films (PQDCFs) as downshifting materials is firstrnreported for enhancing the ultraviolet (UV) response of silicon (Si) photodetectorsrntoward broadband and solar-blind light detection. External quantumrnefficiency measurements show that the UV response of PQDCF coated Sirnphotodiodes greatly improves from near 0% to at most of 50.6% ± 0.5% @rn290 nm. As compared to the calculated maximum value of 87%, the light couplingrnefficiency of the integrated device is determined to be 80%@395 nm,rnsuggesting an efficient downshifting process. Furthermore, PQDCF is alsornsuccessfully adapted for electron multiplying charge coupled device (EMCCD)rnbased image sensor. The PQDCF coated EMCCD shows linear responsernwith high-resolution imaging under illumination at 360, 620, and 960 nm,rnimplying the ability of broadband light detection in the UV, visible (VIS), andrnnear infrared (NIR) region. Furthermore, a solar-blind UV detection is demonstratedrnby integrating a solar-blind UV filter with PQDCF coated EMCCD.rnIn all, the use of PQDCF as luminescent downshifting materials provides anrneffective and low-cost way to improve the UV response of Si photodetectors.