Understanding the Nature of Ultrafast Polarization Dynamics of Ferroelectric Memory in the Multiferroic BiFeO_3

摘要

The vast majority of data-storage devices are based on ferroelectric or magnetic materials.'1'2' The magnetic-memory effect is derived from the spin order, while the ferroelectric memories are based on the spontaneous polarization of electric dipoles. In the quest for superior efficiencies, the operating speed of the devices based on these memories has become a major focus of research. The time needed for the memory parameter to respond to ultrafast electric, magnetic, or optical stimuli is vital to determine its operating speed.