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Study of the Piezoelectric Power Generation of ZnO Nanowire Arrays Grown by Different Methods

机译:不同方法生长的ZnO纳米线阵列的压电发电研究

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摘要

The piezoelectric power generation from ZnO nanowire arrays grown on different substrates using different methods is investigated. ZnO nanowires were grown on n-SiC and n-Si substrates using both the high-temperature vapor liquid solid (VLS) and the low-temperature aqueous chemical growth (ACG) methods. A conductive atomic force microscope (AFM) is used in contact mode to deflect the ZnO nanowire arrays. No substrate effect was observed but the growth method, crystal quality, density, length, and diameter (aspect ratio) of the nanowires are found to affect the piezoelectric behavior. During the AFM scanning in contact mode without biasing voltage, the ZnO nanowire arrays grown by the VLS method produced higher and larger output voltage signal of 35 mV compared to those grown by the ACC method, which produce smaller output voltage signal of only 5 mV. The finite element (FE) method was used to investigate the output voltage for different aspect ratio of the ZnO nanowires. From the FE results it was found that the output voltage increases as the aspect ratio increases and starts to decreases above an aspect ratio of 80 for ZnO nanowires.
机译:研究了使用不同方法在不同衬底上生长的ZnO纳米线阵列产生的压电功率。 ZnO纳米线使用高温气液固体(VLS)和低温水性化学生长(ACG)方法在n-SiC和n-Si衬底上生长。导电原子力显微镜(AFM)在接触模式下用于偏转ZnO纳米线阵列。没有观察到衬底效应,但是发现纳米线的生长方法,晶体质量,密度,长度和直径(长宽比)会影响压电性能。在没有偏置电压的接触模式下进行AFM扫描期间,与仅通过ACC方法产生的ZnO纳米线阵列产生的输出电压信号相比,通过ALS方法产生的ZnO纳米线阵列产生的输出电压信号要高得多,而产生的输出电压信号却只有5 mV。有限元(FE)方法用于研究ZnO纳米线不同纵横比的输出电压。从有限元结果中可以发现,对于ZnO纳米线,当长宽比增加时,输出电压随长宽比的增加而增加,在长宽比为80时开始降低。

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  • 来源
    《Advanced Functional Materials》 |2011年第4期|p.628-633|共6页
  • 作者单位

    Department of Science and Technology Campus Norrkoping Linkoping University SE-601 74 Norrkoping, Sweden;

    School of Materials Science and Engineering Georgia Institute ofTechnology Atlanta, CA, 30332-0245, USA;

    Department of Science and Technology Campus Norrkoping Linkoping University SE-601 74 Norrkoping, Sweden;

    School of Materials Science and Engineering Georgia Institute ofTechnology Atlanta, CA, 30332-0245, USA;

    Department of Science and Technology Campus Norrkoping Linkoping University SE-601 74 Norrkoping, Sweden;

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