High Performance Indium-Gallium-Zinc Oxide Thin Film Transistor via Interface Engineering

摘要

Solution-processed indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs) have become well known in recent decades for their promising commercial potential. However, the unsatisfactory performance of small-sized IGZO TFTs is limiting their applicability. To address this issue, this work introduces an interface engineering method of bi-functional acid modification to regulate the interfaces between electrodes and the channels of IGZO TFTs. This method increases the interface oxygen vacancy concentration and reduces the surface roughness, resulting in higher mobility and enhanced contact at the interfaces. The TFT devices thus treated display contact resistance reduction from 9.1 to 2.3 k omega mm, as measured by the gated four-probe method, as well as field-effect mobility increase from 1.5 to 4.5 cm(2)(V s)(-1). Additionally, a 12 x 12 organic light emitting diode display constructed using the acid modified IGZO TFTs as switching and driving elements demonstrate the applicability of these devices.