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DEFORMATION MECHANISMS FOR HIGH-TEMPERATURE CREEP OF HIGH YTTRIA CONTENT STABILIZED ZIRCONIA SINGLE CRYSTALS

机译:高钇含量稳定氧化锆单晶高温蠕变的变形机理

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Creep of 21 mol./100 yttria-stabilized zirconia single crystals has been studied between 1400 and 1800℃. The creep parameters have been determined indicating a change of the controlling mechanism around 1500℃. At higher temperatures recovery creep is found to be the rate controlling mechanism, with a stress exponent = 3 and an activation energy ≈ 6 eV. Transition to glide controlled creep occurs below 1500℃, associated with larger stress exponents (≈5) and activation energies (≈8.5 eV). TEM obser- vations of the dislocation microstructure confirm this transition. The influence of the high yttria content, which is at the origin of the high creep resistance of these crystals, is discussed for each range of temperatures.
机译:在1400至1800℃之间研究了21摩尔/ 100氧化钇稳定的氧化锆单晶的蠕变。确定了蠕变参数,表明在1500℃左右控制机构发生了变化。在较高的温度下,蠕变是速率控制的机制,应力指数= 3,活化能≈6 eV。在1500℃以下会发生向滑移控制的蠕变转变,这与更大的应力指数(≈5)和激活能(≈8.5eV)有关。 TEM对位错微观结构的观察证实了这一转变。对于每个温度范围,都讨论了高氧化钇含量的影响,这是这些晶体的高抗蠕变性的起因。

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