Modeling defects and plasticity in MgSiO3 post-perovskite: Part 1—generalized stacking faults

摘要

In this work, we examine the transferability of a pairwise potential model (derived for MgSiO3 perovskite) to accurately compute the excess energies of the generalized stacking faults (GSF, also called γ-surfaces) in MgSiO3 post-perovskite. All calculations have been performed at 120 GPa, a pressure relevant to the D″ layer. Taking into account an important aspect of crystal chemistry for complex materials, we consider in detail all possible locations of slip planes in the post-perovskite structure. The γ-surface calculations emphasize the easiness of glide of slip systems with the smallest shear vector [100] and of the [001](010) slip system. Our results are in agreement with previous ab initio calculations. This validates the use the chosen potential model for further full atomistic modeling of dislocations in MgSiO3 post-perovskite.