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Intrinsic Defects Fluctuations of the Local Shapeand the Photo-Oxidation of Black Phosphorus

机译:固有缺陷局部形状的波动和黑磷的光氧化

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摘要

Black phosphorus is a monatomic semiconducting layered material that degrades exothermically in the presence of light and ambient contaminants. Its degradation dynamics remain largely unknown. Even before degradation, local-probe studies indicate non-negligible local curvature—through a nonconstant height distribution—due to the unavoidable presence of intrinsic defects. We establish that these intrinsic defects are photo-oxidation sites because they lower the chemisorption barrier of ideal black phosphorus (>10 eV and out of visible-range light excitations) right into the visible and ultraviolet range (1.6 to 6.8 eV), thus enabling photoinduced oxidation and dissociation of oxygen dimers. A full characterization of the material’s shape and of its electronic properties at the early stages of the oxidation process is presented as well. This study thus provides fundamental insights into the degradation dynamics of this novel layered material.
机译:黑磷是单原子半导体层状材料,在存在光和环境污染物的情况下会放热降解。其降解动力学仍然未知。甚至在降解之前,由于不可避免的内在缺陷的存在,局部探针研究表明,通过不恒定的高度分布,局部曲率不可忽略。我们确定这些内在缺陷是光氧化位点,因为它们将理想的黑磷(> 10 eV且超出可见光激发范围外)的化学吸附势垒降低到可见光和紫外线范围(1.6至6.8 eV),从而实现了氧二聚体的光诱导氧化和离解。还介绍了在氧化过程早期阶段材料的形状和电子性能的完整特征。因此,这项研究为这种新型层状材料的降解动力学提供了基本的见识。

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