Spin‐Torque Memristors: Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing (Adv. Sci. 10/2021)

摘要

In article number 2004645, Weisheng Zhao and co‐workers develop a nano‐scale memristor device based on magnetic tunneling junction. A kind of chiral vortex spin texture plays a key role in forming the multi‐level magnetoresistance. Thanks to its advantages such as long endurance and high speed, this spintronic device may take neuromorphic computing one step further.