Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates

摘要

CoTb(2.7)/Pt(1)/Bi Sb (10–20) stack structure. ( ) Schematic structure of the CoTb(2.7)/Pt(1)/Bi Sb (10–20) stack. ( ) XRD spectra of CoTb(2.7)/Pt(1)/Bi Sb (20) (sample A) and CoTb(2.7)/Pt(1)/Bi Sb (10) (sample B) stack. Optical image of a CoTb(2.7)/Pt(1)/Bi Sb (20) Hall bar device and measurement configuration. ( ) Anomalous Hall resistance of a 25 μm-wide Hall bar of sample A (blue) and sample B (red).