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Tetrahedral amorphous carbon prepared filter cathodic vacuum arc for hole transport layers in perovskite solar cells and quantum dots LEDs

机译:四面体无定形碳制备的过滤阴极阴极真空电弧用于钙钛矿太阳能电池和量子点LED中的空穴传输层

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摘要

(ta-C) films coated through the filtered cathodic vacuum arc (FCVA) process as a hole transport layer (HTL) for perovskite solar cells (PSCs) and quantum dot light-emitting diodes (QDLEDs). The p-type ta-C film has several remarkable features, including ease of fabrication without the need for thermal annealing, reasonable electrical conductivity, optical transmittance, and a high work function. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy examinations show that the electrical properties (sp /sp hybridized bond) and work function of the ta-C HTL are appropriate for PSCs and QDLEDs. In addition, in order to correlate the performance of the devices, the optical, surface morphological, and structural properties of the FCVA-grown ta-C films with different thicknesses (5 ~ 20 nm) deposited on the ITO anode are investigated in detail. The optimized ta-C film with a thickness of 5 nm deposited on the ITO anode had a sheet resistance of 10.33 Ω , a resistivity of 1.34 × 10 Ω cm, and an optical transmittance of 88.97%. Compared to the reference PSC with p-NiO HTL, the PSC with 5 nm thick ta-C HTL yielded a higher power conversion efficiency (PCE, 10.53%) due to its improved fill factor. Further, the performance of QDLEDs with 5 nm thick ta-C hole injection layers (HIL) showed better than the performance of QDLEDs with different ta-C thicknesses. It is concluded that ta-C films have the potential to serve as HTL and HIL in next-generation PSCs and QDLEDs.
机译:(ta-C)膜通过过滤的阴极真空电弧(FCVA)工艺涂覆,作为钙钛矿太阳能电池(PSC)和量子点发光二极管(QDLED)的空穴传输层(HTL)。 p型ta-C膜具有几个显着特征,包括易于制造而无需热退火,合理的电导率,光学透射率和高功函。 X射线光电子能谱和紫外光电子能谱检查表明,ta-C HTL的电性能(sp / sp杂化键)和功函适合于PSC和QDLED。另外,为了使器件的性能相关联,详细研究了FCVA生长的ta-C膜的光学,表面形态和结构特性,该膜具有不同的厚度(5〜20 nm),沉积在ITO阳极上。沉积在ITO阳极上,厚度为5 nm的优化ta-C膜的薄层电阻为10.33Ω,电阻率为1.34×10Ωcm,透光率为88.97%。与带有p-NiO HTL的参考PSC相比,具有5 nm厚ta-C HTL的PSC由于其填充因子的提高而产生了更高的功率转换效率(PCE,10.53%)。此外,具有5 nm厚的ta-C空穴注入层(HIL)的QDLED的性能优于具有不同ta-C厚度的QDLED的性能。结论是,ta-C膜有潜力在下一代PSC和QDLED中用作HTL和HIL。

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