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Tailorable Synthesis of Highly Oxidized Graphene Oxides via an Environmentally-Friendly Electrochemical Process

机译:通过环境友好的电化学方法可定制地合成高氧化石墨烯氧化物

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摘要

Graphene oxide (GO) is an attractive alternative to graphene for many applications due to its captivating optical, chemical, and electrical characteristics. In this work, GO powders with a different amount of surface groups were synthesized from graphite via an electrochemical two-stage process. Many synthesis conditions were tried to maximize the oxidation level, and comprehensive characterization of the resulting samples was carried out via elemental analysis, microscopies (TEM, SEM, AFM), X-ray diffraction, FT-IR and Raman spectroscopies as well as electrical resistance measurements. SEM and TEM images corroborate that the electrochemical process used herein preserves the integrity of the graphene flakes, enabling to obtain large, uniform and well exfoliated GO sheets. The GOs display a wide range of C/O ratios, determined by the voltage and time of each stage as well as the electrolyte concentration, and an unprecedented minimum C/O value was obtained for the optimal conditions. FT-IR evidences strong intermolecular interactions between neighbouring oxygenated groups. The intensity ratio of D/G bands in the Raman spectra is high for samples prepared using concentrated H SO as an electrolyte, indicative of many defects. Furthermore, these GOs exhibit smaller interlayer spacing than that expected according to their oxygen content, which suggests predominant oxidation on the flake edges. Results point out that the electrical resistance is conditioned mostly by the interlayer distance and not simply by the C/O ratio. The tuning of the oxidation level is useful for the design of GOs with tailorable structural, electrical, optical, mechanical, and thermal properties.
机译:氧化石墨烯(GO)具有吸引人的光学,化学和电学特性,因此在许多应用中是石墨烯的有吸引力的替代品。在这项工作中,通过电化学两步法从石墨合成了具有不同表面基团数量的GO粉末。尝试了许多合成条件以最大程度地提高氧化水平,并通过元素分析,微观分析(TEM,SEM,AFM),X射线衍射,FT-IR和拉曼光谱以及电阻对所得样品进行了全面表征测量。 SEM和TEM图像证实了本文使用的电化学过程可保留石墨烯薄片的完整性,从而能够获得大,均匀且脱落良好的GO片材。 GO显示的C / O比范围很广,取决于每个阶段的电压和时间以及电解质浓度,并且在最佳条件下获得了空前的最小C / O值。 FT-IR证明相邻的含氧基团之间存在强烈的分子间相互作用。对于使用浓HSO作为电解质制备的样品,拉曼光谱中D / G带的强度比很高,表明存在许多缺陷。此外,这些GO的层间距比其氧含量所期望的要小,这表明在片状边缘上主要发生氧化。结果指出,电阻主要取决于层间距离,而不仅仅是C / O比。氧化水平的调节对于设计具有可定制的结构,电,光学,机械和热性能的GO很有用。

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