首页> 美国卫生研究院文献>Journal of Clinical Medicine >Low-Level Laser Therapy with a 635 nm Diode Laser Affects Orthodontic Mini-Implants Stability: A Randomized Clinical Split-Mouth Trial
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Low-Level Laser Therapy with a 635 nm Diode Laser Affects Orthodontic Mini-Implants Stability: A Randomized Clinical Split-Mouth Trial

机译:635 nm二极管激光的低水平激光治疗影响正畸微型放大器的稳定性:一项随机的临床裂口试验

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摘要

Background: The study aimed to clinically estimate an influence of a 635 nm diode laser on the stability of orthodontic mini-implants, to assess mini-implants loss, and to evaluate a pain level after the treatment. Materials and Methods: The randomized clinical split-mouth trial included 20 subjects (13 women and 7 men; age: 32.5 ± 6.1 years), 40 implants (RMO, West Colfax Ave., Denver, CO, USA) with a diameter 1.4 mm and length of 10 mm. Mini-implants were placed in the area of the attached gingiva between the second premolar and first molar teeth, 2 mm below the mucogingival junction of both sides of the maxilla. Each implant on the right side (G1, = 20) of the maxilla was irradiated with a diode laser, and the implants on the opposite side (left, G2, = 20) were a control group (without laser irradiation). The 635-nm laser parameters; dose: 10 J per point (20 J/cm ), time: 100 s per point, two points (irradiation on a buccal, and a palatal side of the alveolus/implant), the total energy per session 20 J. Laser application protocol: immediately and 3, 6, 9, 12, 15, and 30 days after surgery. The total energy after all therapeutic sessions was 140 J. The implants’ stability was measured employing a Periotest device (Periotest Test Value—PTV) immediately and 3, 6, 9, 12, 15, 30, and 60 days after the insertion of the mini-implants. Results: We found significantly higher secondary stability, lower mean PTV (6.18 ± 5.30) and (1.51 ± 2.25), for self-drilling mini-implants (G1, test group) in contrast to the control, G2 group (9.17 ± 8.25) and (5.00 ± 3.24), after 30 ( = 0.0003) and 60 days ( = 0.0000). Moreover, the analysis of the mini-implants stability after 635-nm diode laser application revealed significant higher stability in comparison with none irradiated implants (G2 group) after 3 days. ( = 0.0000) There was no significant difference in pain level measured on the NRS-11 scale on both sides of the maxilla. ( = 0.3665) An important finding was that all inserted mini-implants survived during a two-month observation period. Conclusions: 635-nm diode laser at laser irradiation increases the secondary stability of orthodontic mini-implants.
机译:背景:这项研究旨在临床评估635 nm二极管激光器对正畸微型植入物稳定性的影响,评估微型植入物的损失,并评估治疗后的疼痛程度。材料和方法:随机临床分口试验包括20位受试者(13位女性和7位男性;年龄:32.5±6.1岁),40个直径为1.4毫米的植入物(RMO,West Colfax Ave.,丹佛,美国)。长度为10毫米。将微型植入物放置在第二前磨牙和第一磨牙之间的附着牙龈区域,距上颌两侧粘膜龈交界处下方2 mm。上颌骨右侧(G1 = 20)的每个植入物均用二极管激光器照射,而另一侧(左侧G2 = 20)的植入物为对照组(不照射激光)。 635 nm激光参数;剂量:每点10 J(20 J / cm),时间:每点100 s,两点(在颊侧和种植体的颊侧和a侧照射),每次疗程总能量20J。激光照射方案:手术后以及手术后3、6、9、12、15和30天。经过所有治疗后的总能量为140J。立即使用Periotest装置(Periotest测试值-PTV)测量植入物的稳定性,并在植入后3、6、9、12、15、30和60天使用Periotest设备(Periotest测试值-PTV)进行测量。微型植入物。结果:与对照组G2组(9.17±8.25)相比,我们发现自钻式微型植入物(G1,测试组)的次级稳定性明显更高,平均PTV(6.18±5.30)和(1.51±2.25)更低。 30天(= 0.0003)和60天(= 0.0000)之后,则为(5.00±3.24)。此外,对635 nm二极管激光器应用后的微型植入物稳定性的分析显示,与3天后未照射的植入物(G2组)相比,稳定性显着更高。 (= 0.0000)上颌两侧的NRS-11评分在疼痛水平上无显着差异。 (= 0.3665)一个重要发现是,所有插入的微型植入物在两个月的观察期内均存活。结论:635 nm二极管激光器在激光照射下增加了正畸微型植入物的次级稳定性。

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