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Interface Engineered Room‐Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films

机译:超薄锰矿薄膜中的界面工程室温铁磁绝缘态

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摘要

Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room‐temperature FMI is achieved in ultrathin La Ba MnO films grown on SrTiO substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO octahedral rotations in La Ba MnO close to the interface are strongly suppressed. As determined from in situ X‐ray photoemission spectroscopy, O ‐edge X‐ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn e bandwidth caused by the quenched MnO octahedral rotations. The emerging FMI state in La Ba MnO together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices.
机译:居里温度接近室温的铁磁绝缘体(FMI)的超薄外延膜非常需要用于无耗散量子计算和自旋电子器件。但是,这种材料极为罕见。在这里,通过界面邻近效应,在SrTiO衬底上生长的超薄La Ba MnO薄膜中实现了室温FMI。详细的扫描透射电子显微镜图像清楚地表明,La Ba MnO中靠近界面的MnO八面体旋转受到了强烈抑制。根据原位X射线光电子能谱,O边缘X射线吸收能谱和密度泛函理论确定,FMI状态的实现是由于淬火的MnO八面体旋转引起的Mn e带宽的减小。 La Ba MnO中出现的FMI状态以及与钙钛矿衬底实现的必要相干界面为未来的高性能电子设备提供了很高的潜力。

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