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Continuous-Time ΣΔ ADC with Implicit Variable Gain Amplifier for CMOS Image Sensor

机译:具有隐式可变增益放大器的连续时间ΣΔADC用于CMOS图像传感器

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摘要

This paper presents a column-parallel continuous-time sigma delta (CTSD) ADC for mega-pixel resolution CMOS image sensor (CIS). The sigma delta modulator is implemented with a 2nd order resistor/capacitor-based loop filter. The first integrator uses a conventional operational transconductance amplifier (OTA), for the concern of a high power noise rejection. The second integrator is realized with a single-ended inverter-based amplifier, instead of a standard OTA. As a result, the power consumption is reduced, without sacrificing the noise performance. Moreover, the variable gain amplifier in the traditional column-parallel read-out circuit is merged into the front-end of the CTSD modulator. By programming the input resistance, the amplitude range of the input current can be tuned with 8 scales, which is equivalent to a traditional 2-bit preamplification function without consuming extra power and chip area. The test chip prototype is fabricated using 0.18 μm CMOS process and the measurement result shows an ADC power consumption lower than 63.5 μW under 1.4 V power supply and 50 MHz clock frequency.
机译:本文提出了一种用于百万像素分辨率CMOS图像传感器(CIS)的列并行连续时间sigma delta(CTSD)ADC。 Σ-Δ调制器由基于二阶电阻器/电容器的环路滤波器实现。考虑到高功率噪声抑制,第一积分器使用常规的运算跨导放大器(OTA)。第二个积分器是用单端基于反相器的放大器代替标准的OTA来实现的。结果,在不牺牲噪声性能的情况下降低了功耗。此外,传统的列并行读出电路中的可变增益放大器被合并到CTSD调制器的前端。通过对输入电阻进行编程,输入电流的幅度范围可以调整为8个标度,这等效于传统的2位前置放大功能,而无需消耗额外的功率和芯片面积。测试芯片原型采用0.18μmCMOS工艺制造,测量结果显示,在1.4μV电源和50μMHz时钟频率下,ADC功耗低于63.5μW。

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