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Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique

机译:使用原子力显微镜辅助技术制造的定点量子点

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摘要

An atomic-force microscope assisted technique is developed to control the position and size of self-assembled semiconductor quantum dots (QDs). Presently, the site precision is as good as ± 1.5 nm and the size fluctuation is within ± 5% with the minimum controllable lateral diameter of 20 nm. With the ability of producing tightly packed and differently sized QDs, sophisticated QD arrays can be controllably fabricated for the application in quantum computing. The optical quality of such site-controlled QDs is found comparable to some conventionally self-assembled semiconductor QDs. The single dot photoluminescence of site-controlled InAs/InP QDs is studied in detail, presenting the prospect to utilize them in quantum communication as precisely controlled single photon emitters working at telecommunication bands.
机译:开发了一种原子力显微镜辅助技术来控制自组装半导体量子点(QD)的位置和大小。目前,位点精度高达±1.5 nm,尺寸波动在±5%范围内,最小可控制横向直径为20 nm。具有产生紧密包装和不同尺寸的量子点的能力,可以控制地制造复杂的量子点阵列,以用于量子计算中。发现这种现场控制的量子点的光学质量可与某些常规自组装半导体量子点相媲美。详细研究了站点控制的InAs / InP QD的单点光致发光,为将其用作在电信频段工作的精确控制的单光子发射器提供了前景。

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