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Tin Bismuth and Tin–Bismuth Alloy Electrodeposition from Chlorometalate Salts in Deep Eutectic Solvents

机译:深共晶溶剂中含氯金属盐中锡铋和锡铋合金的电沉积

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摘要

The electrodeposition of tin, bismuth, and tin–bismuth alloys from SnII and BiIII chlorometalate salts in the choline chloride/ethylene glycol (1:2 molar ratio) deep eutectic solvent was studied on glassy carbon and gold by cyclic voltammetry, rotating disc voltammetry, and chronoamperometry. The SnII‐containing electrolyte showed one voltammetric redox process corresponding to SnII/Sn0. The diffusion coefficient of [SnCl3], detected as the dominating species by Raman spectroscopy, was determined from Levich and Cottrell analyses. The BiIII‐containing electrolyte showed two voltammetric reduction processes, both attributed to BiIII/Bi0. Dimensionless current/time transients revealed that the electrodeposition of both Sn and Bi on glassy carbon proceeded by 3D‐progressive nucleation at a low overpotential and changed to instantaneous at higher overpotentials. The nucleation rate of Bi on glassy carbon was considerably smaller than that of Sn. Elemental Sn and Bi were electrodeposited on Au‐coated glass slides from their respective salt solutions, as were Sn–Bi alloys from a 2:1 SnII/BiIII solution. The biphasic Sn–Bi alloys changed from a Bi‐rich composition to a Sn‐rich composition by making the deposition potential more negative.
机译:Sn II 和Bi III 氯金属酸盐中的锡,铋和锡-铋合金在深共熔氯化胆碱/乙二醇中的电沉积通过循环伏安法,旋转盘伏安法和计时电流法研究了玻璃碳和金上的溶剂。含Sn II 的电解质表现出一种与Sn II / Sn 0 相对应的伏安氧化还原过程。通过Levich和Cottrell分析确定[SnCl3] -的扩散系数,该扩散系数通过拉曼光谱检测为主要物质。含Bi III 的电解质显示出两个伏安还原过程,均归因于Bi III / Bi 0 。无量纲的电流/时间瞬变表明,在低碳超电势下,Sn和Bi的电沉积都是通过3D渐进形核进行的,而在碳高电势下变为瞬时的。 Bi在玻璃碳上的成核速率明显小于Sn。元素Sn和Bi分别从其各自的盐溶液中电沉积在镀金的载玻片上,而2:1 Sn II / Bi III 溶液中的Sn-Bi合金也是如此。通过使沉积电势更负,两相Sn-Bi合金从富Bi组成变为富Sn组成。

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