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Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019)

机译：阈值切换选择器：基于高度有序Ag纳米点的阈值切换选择器用于X点存储应用（Adv。Sci。10/2019）

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期刊名称 Advanced Science
作者
Qilin Hua; Huaqiang Wu; Bin Gao; Meiran Zhao; Yujia Li; Xinyi Li; Xiang Hou; Meng‐Fan (Marvin) Chang; Peng Zhou; He Qian;
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年(卷),期 2019(6),10
年度 2019
页码 1970058
总页数 1
原文格式 PDF
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1. Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019) [J] . Qilin Hua, Huaqiang Wu, Bin Gao, Advanced Science . 2019,第10期

机译：阈值切换选择器：基于高度有序Ag纳米点的阈值切换选择器，用于X点存储应用（Adv。Sci。10/2019）
2. A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications [J] . Qilin Hua, Huaqiang Wu, Bin Gao, Advanced Science . 2019,第10期

机译：基于高序Ag纳米点的阈值开关选择器，用于X点存储应用
3. High‐Uniformity Threshold Switching HfO2‐Based Selectors with Patterned Ag Nanodots [J] . Yujia Li, Jianshi Tang, Bin Gao, Advanced Science . 2020,第22期

机译：高均匀性阈值切换HFO2的基于AG纳米蛋白的选择器
4. Switching Speed Analysis and Controlled Oscillatory Behavior of a Cr-Doped V2O3 Threshold Switching Device for Memory Selector and Neuromorphic Computing Application [C] . T. Hennen, D. Bedau, J. A. J. Rupp, IEEE International Memory Workshop . 2019

机译：Cr掺杂的V 2 O 3 阈值切换装置的开关速度分析和可控振荡行为，用于存储器选择器和神经形态计算应用
5. Study of Thermal-induced Threshold Switching Devices for Selector Applications [D] . Li, Dasheng. 2018

机译：选择器应用的热感应门限开关装置的研究
6. A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications [O] . Qilin Hua, Huaqiang Wu, Bin Gao, 2019

机译：基于高阶Ag纳米点的阈值开关选择器用于X点存储应用
7. A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications [O] . Qilin Hua, Huaqiang Wu, Bin Gao, 2019

机译：基于高度有序AG纳米仪的阈值开关选择器，用于X点内存应用
8. Memory and threshold switching in thin film PMMA polymer [R] . Rabah, K. V. O. 1995

机译：薄膜pmma聚合物中的记忆和阈值转换

Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019)

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